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DOI: 10.22184/1992-4178.2023.230.9.118.127
The article considers an approach to the design of monolithic F-class microwave amplifiers in the X-band based on the 0.25 µm GaAs PHEMT technological process.
The article considers an approach to the design of monolithic F-class microwave amplifiers in the X-band based on the 0.25 µm GaAs PHEMT technological process.
Теги: 0.25 µm topology 25 мкм bandwidth design gaas phemt output power phemt на gaas quality factor выходная мощность добротность полоса пропускания проектирование топология 0
DESIGN OF MONOLITHIC F-CLASS MICROWAVE AMPLIFIERS
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