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Issue #5/2020
V. Belkov, A. Tsotsorin, I. Semeykin, M. Chernykh
POWER MICROWAVE AND SWITCHING GaN TRANSISTORS
POWER MICROWAVE AND SWITCHING GaN TRANSISTORS
DOI: 10.22184/1992-4178.2020.196.5.78.80
NIIET JSC developed a series of 400 W power microwave transistors for frequency range up to 1,6 GHz and 80 W power microwave transistors for frequency range up to 12 GHz. It also presented a series of power switching transistors with a drain-source voltage of 100, 200 and 650 V.
NIIET JSC developed a series of 400 W power microwave transistors for frequency range up to 1,6 GHz and 80 W power microwave transistors for frequency range up to 12 GHz. It also presented a series of power switching transistors with a drain-source voltage of 100, 200 and 650 V.
Теги: gallium nitride microwave transistor switching gan transistor нитрид галлия переключающий gan-транзистор свч-транзистор
POWER MICROWAVE AND SWITCHING GaN TRANSISTORS
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